The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2013

Filed:

Jun. 26, 2012
Applicants:

Robert H. Dennard, Croton-on-Hudson, NY (US);

Brian L. Ji, Fishkill, NY (US);

Robert K. Montoye, Rochester, MN (US);

Inventors:

Robert H. Dennard, Croton-on-Hudson, NY (US);

Brian L. Ji, Fishkill, NY (US);

Robert K. Montoye, Rochester, MN (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01); G05F 3/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

An on-chip voltage conversion apparatus for integrated circuits includes a first capacitor; a first NFET device configured to selectively couple a first electrode of the first capacitor to a low side voltage rail of a first voltage domain; a first PFET device configured to selectively couple the first electrode of the first capacitor to a high side voltage rail of the first voltage domain; a second NFET device configured to selectively couple a second electrode of the first capacitor to a low side voltage rail of a second voltage domain, wherein the low side voltage rail of the second voltage domain corresponds to the high side voltage rail of the first voltage domain; and a second PFET device configured to selectively couple the second electrode of the first capacitor to a high side voltage rail of the second voltage domain.


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