The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Jul. 27, 2009
Takahiro Maeda, Toyama, JP;
Nobuo Owada, Ome, JP;
Takahiro Maeda, Toyama, JP;
Nobuo Owada, Ome, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes the steps of: loading a substrate into a reaction chamber; supplying reactive gases into the reaction chamber and processing the substrate; and unloading the processed substrate from the reaction chamber, wherein the step of processing the substrate includes: a first film formation step of setting the substrate to a first temperature and forming a first silicon film including impurity atoms on the substrate and a second film formation step of setting the substrate to a second temperature, which is lower than the first temperature, and forming a second silicon film that includes no impurity atoms or has an impurity concentration lower than that of the first silicon film on at least the first silicon film.