The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Sep. 27, 2011
Chandrasekhar Sarma, Poughkeepsie, NY (US);
Jingyu Lian, Walkill, NY (US);
Matthias Lipinski, Poughkeepsie, NY (US);
Haoren Zhuang, Walkill, NY (US);
Chandrasekhar Sarma, Poughkeepsie, NY (US);
Jingyu Lian, Walkill, NY (US);
Matthias Lipinski, Poughkeepsie, NY (US);
Haoren Zhuang, Walkill, NY (US);
Infineon Technologies AG, Munich, DE;
Abstract
Metrology systems and methods for lithography processes are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a mask having a plurality of corner rounding test patterns formed thereon. A first semiconductor device is provided, and a layer of photosensitive material of the first semiconductor device is patterned with a plurality of corner rounding test features using the mask and a lithography process. An amount of corner rounding of the lithography process is measured by analyzing the plurality of corner rounding test features relative to other of the plurality of corner rounding test features formed on the layer of photosensitive material of the semiconductor device. The lithography process or the mask is altered in response to the amount of corner rounding measured, and a second semiconductor device is provided. The second semiconductor device is affected using the altered lithography process or the altered mask.