The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Jun. 13, 2012
Rytis Dargis, Fremont, CA (US);
Andrew Clark, Los Altos, CA (US);
Robin Smith, Palo Alto, CA (US);
Michael Lebby, Apanche Junction, AZ (US);
Rytis Dargis, Fremont, CA (US);
Andrew Clark, Los Altos, CA (US);
Robin Smith, Palo Alto, CA (US);
Michael Lebby, Apanche Junction, AZ (US);
Other;
Abstract
A method of forming a layer of amorphous silicon oxide positioned between a layer of rare earth oxide and a silicon substrate. The method includes providing a crystalline silicon substrate and depositing a layer of rare earth metal on the silicon substrate in an oxygen deficient ambient at a temperature above approximately 500° C. The rare earth metal forms a layer of rare earth silicide on the substrate. A first layer of rare earth oxide is deposited on the layer of rare earth silicide with a structure and lattice constant substantially similar to the substrate. The structure is annealed in an oxygen ambience to transform the layer of rare earth silicide to a layer of amorphous silicon and an intermediate layer of rare earth oxide between the substrate and the first layer of rare earth oxide.