The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Apr. 11, 2011
Sang-wook Kim, Yongin-si, KR;
Chun-suk Suh, Yongin-si, KR;
Seong-woon Choi, Suwon-si, KR;
Jung-hoon Ser, Seoul, KR;
Moon-gyu Jeong, Seoul, KR;
Seong-bo Shim, Suwon-si, KR;
Sang-wook Kim, Yongin-si, KR;
Chun-suk Suh, Yongin-si, KR;
Seong-woon Choi, Suwon-si, KR;
Jung-hoon Ser, Seoul, KR;
Moon-gyu Jeong, Seoul, KR;
Seong-bo Shim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of manufacturing a semiconductor device includes dividing a design pattern layout into a repetitive pattern part and a non-repetitive pattern part, obtaining an optical proximity correction (OPC) bias from an extracted portion, the extracted portion being a partial portion of the repetitive pattern part, applying the OPC bias obtained from the extracted portion equally to the extracted portion and other portions of the repetitive pattern part so as to form a first corrected layout in which corrected layouts of the other portions are the same as that of the extracted portion, and forming a photomask in all portions of the repetitive pattern part according to the first corrected layout.