The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2013

Filed:

Jul. 02, 2010
Applicant:

Chung Zen Chen, Hsinchu, TW;

Inventor:

Chung Zen Chen, Hsinchu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for eliminating bit line leakage current of a memory cell in random access memory devices comprises the steps of: periodically activating a pre-charge equalization circuit, which provides a pre-charge voltage to a pair of complementary bit lines of a memory cell, if the memory cell is in a self-refresh mode or a standby mode; and temporarily activating the pre-charge equalization circuit after the memory cell is refreshed if the memory cell is in the self-refresh mode or the standby mode.


Find Patent Forward Citations

Chen, Chung. (2013). Circuit and method for eliminating bit line leakage current in random access memory devices (U.S. Patent No. 8391092). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8391092

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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