The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
May. 04, 2010
Ioan Lucian Prejbeanu, Sassenage, FR;
Clarisse Ducruet, Grenoble, FR;
Ioan Lucian Prejbeanu, Sassenage, FR;
Clarisse Ducruet, Grenoble, FR;
Crocus Technology SA, Grenoble Cedex, FR;
Abstract
A magnetic random access memory (MRAM) cell with a thermally assisted switching (TAS) writing procedure, comprising a magnetic tunnel junction formed from a ferromagnetic storage layer having a first magnetization adjustable at a high temperature threshold, a ferromagnetic reference layer having a fixed second magnetization direction, and an insulating layer, said insulating layer being disposed between the ferromagnetic storage and reference layers; a select transistor being electrically connected to said magnetic tunnel junction and controllable via a word line; a current line electrically connected to said magnetic tunnel junction; characterized in that the magnetocrystalline anisotropy of the ferromagnetic storage layer is essentially orthogonal with the magnetocrystalline anisotropy of the ferromagnetic reference layer. The TAS-MRAM cell of the invention can be written with a smaller magnetic field than the one used in conventional TAS-MRAM cells and has low power consumption.