The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2013

Filed:

Apr. 19, 2012
Applicants:

Ki-hun Jeong, Cheonan-si, KR;

Seung-hwan Shim, Seongnam-si, KR;

Joo-han Kim, Yongin-si, KR;

Hong-kee Chin, Suwon-si, KR;

Inventors:

Ki-Hun Jeong, Cheonan-si, KR;

Seung-Hwan Shim, Seongnam-si, KR;

Joo-Han Kim, Yongin-si, KR;

Hong-Kee Chin, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/13 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.


Find Patent Forward Citations

Loading…