The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Apr. 17, 2008
Wataru Saito, Kanagawa-ken, JP;
Hidetoshi Fujimoto, Kanagawa-ken, JP;
Takao Noda, Kanagawa-ken, JP;
Yasunobu Saito, Tokyo, JP;
Tomohiro Nitta, Kanagawa-ken, JP;
Wataru Saito, Kanagawa-ken, JP;
Hidetoshi Fujimoto, Kanagawa-ken, JP;
Takao Noda, Kanagawa-ken, JP;
Yasunobu Saito, Tokyo, JP;
Tomohiro Nitta, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes: a first semiconductor layer made of an AlGaN (0≦×<1); a second semiconductor layer provided on the first semiconductor layer and made of an undoped or first conductivity type AlGaN (0<y≦1, x<y); an anode electrode and a cathode electrode which are connected to the second semiconductor layer; and a third semiconductor layer of second conductivity type provided between the anode electrode and the cathode electrode when viewed from a direction perpendicular to an upper surface of the second semiconductor layer. The third semiconductor layer is depleted when a predetermined magnitude or more of voltage is applied between the anode electrode and the cathode electrode.