The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Mar. 01, 2010
Applicants:
Hisato Yabuta, Machida, JP;
Nobuyuki Kaji, Kawasaki, JP;
Ryo Hayashi, Yokohama, JP;
Inventors:
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/00 (2006.01); H01L 31/036 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a SnO-containing semiconductor film includes a first step of forming a SnO-containing film; a second step of forming an insulator film composed of an oxide or a nitride on the SnO-containing film to provide a laminated film including the SnO-containing film and the insulator film; and a third step of subjecting the laminated film to a heat treatment.
Yabuta, Hisato. (2013). Method for forming semiconductor film, method for forming semiconductor device and semiconductor device (U.S. Patent No. 8389996). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8389996
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile