The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2013

Filed:

Dec. 29, 2006
Applicants:

Arijit Raychowdhury, West Lafayette, IN (US);

Ali Keshavarzi, Portland, OR (US);

Juanita Kurtin, Hillsboro, OR (US);

Vivek DE, Beaverton, OR (US);

Inventors:

Arijit Raychowdhury, West Lafayette, IN (US);

Ali Keshavarzi, Portland, OR (US);

Juanita Kurtin, Hillsboro, OR (US);

Vivek De, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods and associated structures of forming a microelectronic device are described. Those methods may comprise forming a channel region on a substrate, wherein the channel region comprises at least one CNT, forming at least one source/drain region adjacent the channel region, and then forming a gate electrode on the channel region, wherein a width of the gate electrode comprises about 50 percent to about 90 percent of a width of the contact region.


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