The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2013

Filed:

Oct. 14, 2010
Applicants:

Yung-tin Chen, Santa Clara, CA (US);

Chuanbin Pan, Sunnyvale, CA (US);

Andrei Mihnea, San Jose, CA (US);

Steven Maxwell, Sunnyvale, CA (US);

Kun Hou, Milpitas, CA (US);

Inventors:

Yung-Tin Chen, Santa Clara, CA (US);

Chuanbin Pan, Sunnyvale, CA (US);

Andrei Mihnea, San Jose, CA (US);

Steven Maxwell, Sunnyvale, CA (US);

Kun Hou, Milpitas, CA (US);

Assignee:

SanDisk 3D LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In some embodiments, a memory cell is provided that includes a storage element formed from an MIM stack including (1) a first conductive layer; (2) an RRS layer formed above the first conductive layer; and (3) a second conductive layer formed above the RRS layer, at least one of the first and second conductive layers comprising a first semiconductor material layer. The memory cell includes a steering element coupled to the storage element, the steering element formed from the first semiconductor material layer of the MIM stack and one or more additional material layers. Numerous other aspects are provided.


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