The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Mar. 17, 2010
Walter Schwarzenbach, Saint Nazaire Les Eymes, FR;
Sébastien Kerdiles, Saint-ismier, FR;
Patrick Reynaud, Saint Martin D'heres, FR;
Ludovic Ecarnot, Vif, FR;
Eric Neyret, Gaujac, FR;
Walter Schwarzenbach, Saint Nazaire Les Eymes, FR;
Sébastien Kerdiles, Saint-ismier, FR;
Patrick Reynaud, Saint Martin D'heres, FR;
Ludovic Ecarnot, Vif, FR;
Eric Neyret, Gaujac, FR;
Soitec, Bernin, FR;
Abstract
The invention relates to a finishing method for a silicon-on-insulator (SOI) substrate that includes an oxide layer buried between an active silicon layer and a support layer of silicon. The method includes applying the following steps in succession: a first rapid thermal annealing (RTA) of the SOI substrate; a sacrificial oxidation of the active silicon layer of the substrate conducted to remove a first oxide thickness; a second RTA of the substrate; and a second sacrificial oxidation of the active silicon layer conducted to remove a second oxide thickness that is thinner than the first oxide thickness.