The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Jul. 22, 2011
Applicants:
Hung-lin Shih, Hsinchu, TW;
Chih-ta Chen, Changhua County, TW;
Inventors:
Hung-Lin Shih, Hsinchu, TW;
Chih-Ta Chen, Changhua County, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A non-volatile memory structure includes a substrate; a poly gate structure formed on the substrate; a contact etching stop layer formed over the poly gate structure and including at least a silicon nitride layer and a first silicon oxide layer overlying the silicon nitride layer; and an inter-layer dielectric layer formed on the first silicon oxide layer. The first silicon oxide layer has a density higher than that of the inter-layer dielectric layer.