The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Feb. 28, 2011
Kazuhito Kamei, Hyogo, JP;
Kazuhiko Kusunoki, Amagasaki, JP;
Nobuyoshi Yashiro, Amagasaki, JP;
Akihiro Yauchi, Nishinomiya, JP;
Shinji Shimosaki, Amagasaki, JP;
Kazuhito Kamei, Hyogo, JP;
Kazuhiko Kusunoki, Amagasaki, JP;
Nobuyoshi Yashiro, Amagasaki, JP;
Akihiro Yauchi, Nishinomiya, JP;
Shinji Shimosaki, Amagasaki, JP;
Sumitomo Metal Industries, Ltd., Osaka, JP;
Abstract
A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5×10/cmand preferably less than 1×10/cmand which is suitable for use in various devices by liquid phase growth using a SiC solution in which the solvent is a melt of a Si alloy employs a Si alloy having a composition which is expressed by SiCrTiwherein x, y, and z (each in atomic percent) satisfy0.50<x<0.68, 0.08<y<0.35, and 0.08<z<0.35, or   (1)0.40<x≦0.50, 0.15<y<0.40, and 0.15<z<0.35.  (2)x, y, and z preferably satisfy 0.53<x<0.65, 0.1<y<0.3, and 0.1<z<0.3.