The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Jan. 31, 2012
Semiconductor having interconnects with improved mechanical properties by insertion of nanoparticles
Junjing Bao, Fishkill, NY (US);
Tien-jen J. Cheng, Bedford, NY (US);
Naftali E. Lustig, Croton-on-Hudson, NY (US);
Junjing Bao, Fishkill, NY (US);
Tien-Jen J. Cheng, Bedford, NY (US);
Naftali E. Lustig, Croton-on-Hudson, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In a BEOL process, UV radiation is used in a curing process of ultra low-k (ULK) dielectrics. This radiation penetrates through the ULK material and reaches the cap film underneath it. The interaction between the UV light and the film leads to a change the properties of the cap film. Of particular concern is the change in the stress state of the cap from compressive to tensile stress. This leads to a weaker dielectric-cap interface and mechanical failure of the ULK film. A layer of nanoparticles is inserted between the cap and the ULK film. The nanoparticles absorb the UV light before it can damage the cap film, thus maintaining the mechanical integrity of the ULK dielectric.