The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Jul. 20, 2010
Applicants:
Min Seok Kim, Gyeonggi-do, KR;
Hyo Seob Yoon, Gyeonggi-do, KR;
Inventors:
Min Seok Kim, Gyeonggi-do, KR;
Hyo Seob Yoon, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase change random access memory includes a semiconductor substrate, a switching device pattern formed on the semiconductor substrate, a bottom electrode contact pattern formed on the switching device pattern, a phase change layer pattern formed on the bottom electrode contact pattern, and an insulating layer disposed at a portion of an contact surface between the bottom electrode contact pattern and the phase change layer pattern.