The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Jan. 31, 2008
Applicant:
Wang Nang Wang, Bath, GB;
Inventor:
Wang Nang Wang, Bath, GB;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of producing a layered semiconductor device comprises the steps of: (a) providing a base comprising a plurality of semiconductor nano-structures, (b) growing a semiconductor material onto the nano-structures using an epitaxial 5 growth process, and (c) growing a layer of the semiconductor material using an epitaxial growth process.
Wang, Wang. (2013). Production of semiconductor devices (U.S. Patent No. 8383493). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8383493
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile