The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Oct. 26, 2007
Pere Roca I Cabarrocas, Villebon sur Yvette, FR;
Pavel Bulkin, Villebon sur Yvette, FR;
Dmitri Daineka, Palaiseau, FR;
Patrick Leempoel, Brussels, BE;
Pierre Descamps, Rixensart, BE;
Thibault Kervyn DE Meerendre, Brussels, BE;
Pere Roca I Cabarrocas, Villebon sur Yvette, FR;
Pavel Bulkin, Villebon sur Yvette, FR;
Dmitri Daineka, Palaiseau, FR;
Patrick Leempoel, Brussels, BE;
Pierre Descamps, Rixensart, BE;
Thibault Kervyn De Meerendre, Brussels, BE;
Dow Corning Europe S.A., Seneffe, BE;
Ecole Polytechnique, Palaiseau, FR;
Abstract
A method is described of depositing film of an amorphous or microcrystalline material, for example silicon, from a plasma on to a substrate. Microwave energy is introduced into a chamber as a sequence of discrete microwave pulses, a film precursors gas is introduced into the chamber as a sequence of discrete gas pulses, and gas for generating atomic hydrogen is supplied to the chamber at least during each microwave pulse. Each microwave pulse is followed in non-overlapping fashion with a precursor gas pulse, and each precursor gas pulse is followed by a period during which there is neither a microwave pulse nor a precursor gas pulse.