The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Sep. 27, 2007
Applicants:
Shinji Togawa, Omura, JP;
Toshiyuki Sato, Omura, JP;
Inventors:
Shinji Togawa, Omura, JP;
Toshiyuki Sato, Omura, JP;
Assignee:
Sumco Techxiv Corporation, Omura-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); C30B 15/14 (2006.01); C30B 11/00 (2006.01); C30B 13/00 (2006.01); C30B 21/04 (2006.01); C30B 28/08 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a silicon monocrystal by FZ method, wherein a P-type or N-type silicon crystal having been pulled up by CZ method is used as a raw material. While impurities whose conductivity type is the same as that of the raw material are supplied by a gas doping method, the raw material is recrystallized by an induction-heating coil for obtaining a product-monocrystal.