The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Oct. 11, 2010
Chan Park, Gwangju, KR;
Changseok Kang, Seongnam-si, KR;
Sung-il Chang, Hwaseong-si, KR;
Youngwoo Park, Seoul, KR;
Jongsun Sel, Hwaseong-si, KR;
Jintaek Park, Suwon-si, KR;
Chan Park, Gwangju, KR;
Changseok Kang, Seongnam-si, KR;
Sung-Il Chang, Hwaseong-si, KR;
Youngwoo Park, Seoul, KR;
Jongsun Sel, Hwaseong-si, KR;
Jintaek Park, Suwon-si, KR;
Abstract
Provided are nonvolatile memory devices and methods of operating thereof. The nonvolatile memory devices include: dummy cells connected to a dummy bit line; and a dummy bit line bias circuit providing a dummy bit line voltage to the dummy bit line during a program operation, wherein, due to the dummy bit line voltage, at least one of the dummy cells is programmed with a threshold voltage lower than the top programmed state and higher than an erased state during the program operation.