The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Sep. 15, 2010
Theodore W. Houston, Richardson, TX (US);
Makarand R. Kulkarni, Richardson, TX (US);
James (Hsu-hsuan) Lan, Dallas, TX (US);
Theodore W. Houston, Richardson, TX (US);
Makarand R. Kulkarni, Richardson, TX (US);
James (Hsu-Hsuan) Lan, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A 3T DRAM cell includes a first transistor having a first control element connected as a storage node and a second transistor connected between the first transistor and a read bit line having a second control element connected to a read word line. The 3T DRAM cell also includes a third transistor connected between the storage node and a write bit line having a third control element connected to a write word line. Additionally, the DRAM cell includes a supplemental capacitance connected to the storage node and configured to extend a refresh interval of the 3T DRAM cell. A method of operating an integrated circuit having a 3T DRAM cell includes providing a memory state on a storage node of the 3T DRAM cell and extending a refresh interval of the memory state with a supplemental capacitance added to the storage node.