The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Jun. 08, 2010
Yasuhiro Naka, Hitachinaka, JP;
Naotaka Tanaka, Kasumigaura, JP;
Toshihide Uematsu, Matsudo, JP;
Chuichi Miyazaki, Akishima, JP;
Kazunari Suzuki, Tokyo, JP;
Yasuyuki Nakajima, Tachikawa, JP;
Yoshiyuki Abe, Hinode, JP;
Kenji Kohzu, Hitachinaka, JP;
Kosuke Kitaichi, Higashimurayama, JP;
Shinya Ogane, Fuchu, JP;
Yasuhiro Naka, Hitachinaka, JP;
Naotaka Tanaka, Kasumigaura, JP;
Toshihide Uematsu, Matsudo, JP;
Chuichi Miyazaki, Akishima, JP;
Kazunari Suzuki, Tokyo, JP;
Yasuyuki Nakajima, Tachikawa, JP;
Yoshiyuki Abe, Hinode, JP;
Kenji Kohzu, Hitachinaka, JP;
Kosuke Kitaichi, Higashimurayama, JP;
Shinya Ogane, Fuchu, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
In a state where an adhesive tape is attached onto a main surface of a semiconductor wafer, a trench is formed in a rear surface of the semiconductor wafer. For forming the trench in the rear surface of the semiconductor wafer, after coating a resist film on the rear surface of the semiconductor wafer, the resist film is patterned by using the photolithography technology. The patterning of the resist film is performed so as not to leave the resist film in the region where the trench is to be formed. Then, the trench is formed in a predetermined region of the semiconductor wafer by the dry etching technology using the patterned resist film as a mask. Specifically, the trench is formed in the region near the dicing line.