The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Jun. 16, 2006
Michimasa Miyanaga, Itami, JP;
Naho Mizuhara, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Seiji Nakahata, Itami, JP;
Hideaki Nakahata, Itami, JP;
Michimasa Miyanaga, Itami, JP;
Naho Mizuhara, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Seiji Nakahata, Itami, JP;
Hideaki Nakahata, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal () inside a crystal-growth vessel (), the method being characterized in that a porous body formed from a metal carbide, whose porosity is between 0.1% and 70% is employed in at least a portion of the crystal-growth vessel (). Employing the crystal-growth vessel () makes it possible to discharge from 1% to 50% of a source gas () inside the crystal-growth vessel () via the pores in the porous body to the outside of the crystal-growth vessel ().