The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2013

Filed:

Dec. 21, 2009
Applicants:

Timothy C. Langtry, San Jose, CA (US);

Richard Dodge, Santa Clara, CA (US);

Hernan Castro, Shingle Springs, CA (US);

Derchang Kau, Cupertino, CA (US);

Stephen Tang, Fremont, CA (US);

Jeremy Hirst, Orangevale, CA (US);

Inventors:

Timothy C. Langtry, San Jose, CA (US);

Richard Dodge, Santa Clara, CA (US);

Hernan Castro, Shingle Springs, CA (US);

Derchang Kau, Cupertino, CA (US);

Stephen Tang, Fremont, CA (US);

Jeremy Hirst, Orangevale, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A phase change memory using an ovonic threshold switch selection device may be programmed from one state to another by first turning on the ovonic threshold switch. After the voltage across the cell has fallen, the cell may then be biased to program the cell to the desired state.


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