The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Aug. 30, 2010
Chia-chung Chen, Keelung, TW;
Chewn-pu Jou, Hsinchu, TW;
Feng Yuan, Yonghe, TW;
Sally Liu, HsinChu, TW;
Chia-Chung Chen, Keelung, TW;
Chewn-Pu Jou, Hsinchu, TW;
Feng Yuan, Yonghe, TW;
Sally Liu, HsinChu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An integrated circuit device is disclosed. An exemplary integrated circuit device includes: a semiconductor substrate; a fin structure disposed over the semiconductor substrate; and a gate structure disposed over the base portion of the fin structure. The collector portion is a first doped region including a first type dopant, and is coupled with a first terminal for electrically biasing the collector portion. The emitter portion is a second doped region including the first type dopant, and is coupled with a second terminal for electrically biasing the emitter portion. The base portion is a third doped region including a second type dopant opposite the first type, and is coupled with a third terminal for electrically biasing the base portion. The gate structure is coupled with a fourth terminal for electrically biasing the gate structure, such that the gate structure controls a path of current through the base portion.