The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Aug. 19, 2010
Jing-yi Yan, Taoyuan County, TW;
Liang-hsiang Chen, Taichung, TW;
Jing-Yi Yan, Taoyuan County, TW;
Liang-Hsiang Chen, Taichung, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A thin film transistor is provided. The thin film transistor includes a gate, at least an inorganic material layer, at least one dielectric layer, a source, a drain, and an active layer. The active layer is located on the substrate. The source and the drain cover a part of the active layer and a part of the substrate. A channel region exists between the source and the drain. The inorganic material layer is filled into the channel region. The dielectric layer at least including an organic material covers the inorganic material, the source and the drain. The gate is disposed on the dielectric layer.