The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2013

Filed:

Jul. 26, 2007
Applicants:

Myoung Hwan OH, Daejeon, KR;

Seung Beom Cho, Daejeon, KR;

Jun Seok Nho, Daejeon, KR;

Jong Pil Kim, Daejeon, KR;

Jang Yul Kim, Daejeon, KR;

Inventors:

Myoung Hwan Oh, Daejeon, KR;

Seung Beom Cho, Daejeon, KR;

Jun Seok Nho, Daejeon, KR;

Jong Pil Kim, Daejeon, KR;

Jang Yul Kim, Daejeon, KR;

Assignee:

LG Chem, Ltd., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/00 (2006.01); C03C 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is cerium oxide powder for a CMP abrasive, which can improve polishing selectivity of a silicon oxide layer to a silicon nitride layer and/or within-wafer non-uniformity (WIWNU) during chemical mechanical polishing in a semiconductor fabricating process. More particularly, the cerium oxide powder is obtained by using cerium carbonate having a hexagonal crystal structure as a precursor. Also, CMP slurry comprising the cerium oxide powder as an abrasive, and a shallow trench isolation method for a semiconductor device using the CMP slurry as polishing slurry are disclosed.


Find Patent Forward Citations

Loading…