The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Nov. 11, 2010
Ying-je Chen, Taichung, TW;
Yun-jen Ting, Hsinchu County, TW;
Wein-town Sun, Taoyuan County, TW;
Kai-yuan Hsiao, Taichung, TW;
Cheng-jye Liu, Hsinchu County, TW;
Ying-Je Chen, Taichung, TW;
Yun-Jen Ting, Hsinchu County, TW;
Wein-Town Sun, Taoyuan County, TW;
Kai-Yuan Hsiao, Taichung, TW;
Cheng-Jye Liu, Hsinchu County, TW;
eMemory Technology Inc., Hsinchu Science Park, Hsin-Chu, TW;
Abstract
A nonvolatile memory device for reducing programming current and improving reliability comprises a memory cell array, a write circuit, and a verification circuit. The memory cell array comprises memory cells arranged at crossing points of a bit-line and word-line matrix of the memory cell array. The write circuit provides multiple variable pulses to each word-line for programming. The multiple variable pulses have predetermined amplitude for keeping gate injection current roughly maximum while lowering conduction current during programming operation. The verification circuit senses variation of the conduction current during the programming operation, and disables the programming operation if the sensed conduction current during the programming operation reaches a predetermined value.