The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2013

Filed:

Oct. 15, 2010
Applicants:

Andreas Peter Meiser, Sauerlach, DE;

Gerhard Prechtl, St. Jacob i. Rosental, AT;

Nils Jensen, Feldkirchen-Westerham, DE;

Inventors:

Andreas Peter Meiser, Sauerlach, DE;

Gerhard Prechtl, St. Jacob i. Rosental, AT;

Nils Jensen, Feldkirchen-Westerham, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/66 (2006.01); H01L 29/00 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit includes a semiconductor body of a first conductivity type. The semiconductor body includes a first semiconductor zone of a second conductivity type opposite the first conductivity type. The first semiconductor zone extends to a surface of the semiconductor body. A second semiconductor zone of the first conductivity type is embedded in the first semiconductor zone and extends as far as the surface. A third semiconductor zone of the second conductivity type at least partly projects from the first semiconductor zone along a lateral direction running parallel to the surface. A contact structure provides an electrical contact with the first and second semiconductor zones at the surface. The second semiconductor zone is arranged, along the lateral direction, between the part of the third semiconductor zone which projects from the first semiconductor zone and a part of the contact structure in contact with the first semiconductor zone.


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