The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Sep. 17, 2010
Applicants:
Yong-lack Choi, Seoul, KR;
Sunghoi Hur, Seoul, KR;
Jaeduk Lee, Seongnam-si, KR;
Jungdal Choi, Hwaseong-si, KR;
Inventors:
Yong-Lack Choi, Seoul, KR;
Sunghoi Hur, Seoul, KR;
Jaeduk Lee, Seongnam-si, KR;
Jungdal Choi, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
Semiconductor devices and methods of forming the same. The semiconductor devices include a tunnel insulation layer on a substrate, a floating gate on the tunnel insulation layer, a gate insulation layer on the floating gate, a low-dielectric constant (low-k) region between the top of the floating gate and the gate insulation layer, the low-k region having a lower dielectric constant than a silicon oxide, and a control gate on the gate insulation layer.