The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Sep. 20, 2010
Akihiro Kojima, Kanagawa-ken, JP;
Hiroshi Koizumi, Kanagawa-ken, JP;
Yoshiaki Sugizaki, Kanagawa-ken, JP;
Tomomichi Naka, Kanagawa-ken, JP;
Yasuhide Okada, Kanagawa-ken, JP;
Akihiro Kojima, Kanagawa-ken, JP;
Hiroshi Koizumi, Kanagawa-ken, JP;
Yoshiaki Sugizaki, Kanagawa-ken, JP;
Tomomichi Naka, Kanagawa-ken, JP;
Yasuhide Okada, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.