The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Dec. 08, 2008
Chung Long Cheng, Baoshan Township, Hsinchu County, TW;
Kong-beng Thei, Hsin-Chu Country, TW;
Harry Chuang, Hsin-Chu, TW;
Chung Long Cheng, Baoshan Township, Hsinchu County, TW;
Kong-Beng Thei, Hsin-Chu Country, TW;
Harry Chuang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for fabricating a semiconductor device with improved performance is disclosed. The method comprises providing a substrate including a first region and a second region; forming at least one isolation region having a first aspect ratio in the first region and at least one isolation region having a second aspect ratio in the second region; performing a high aspect ratio deposition process to form a first layer over the first and second regions of the substrate; removing the first layer from the second region; and performing a high density plasma deposition process to form a second layer over the first and second regions of the substrate.