The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Sep. 21, 2011
Jeng-hsing Jang, Taoyuan County, TW;
Yi-nan Chen, Taoyuan County, TW;
Hsien-wen Liu, Taoyuan County, TW;
Jeng-Hsing Jang, Taoyuan County, TW;
Yi-Nan Chen, Taoyuan County, TW;
Hsien-Wen Liu, Taoyuan County, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A method for forming a contact of a semiconductor device with reduced step height is disclosed, comprising forming a plurality of gates, forming a buffer layer on each of the gates, forming an insulating layer to fill spaces between the gates, forming strip-shaped photoresist patterns which cross the gates, etching the insulating layer to form first openings using a self-aligning process with the gates and the strip-shaped photoresist patterns as a mask, forming a conductive contact layer to fill the first openings, performing a first chemical mechanical polish (CMP) process to the conductive contact layer, removing the buffer layer, and forming a second chemical mechanical polish (CMP) process to the conductive contact layer.