The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
May. 23, 2011
John K. Lee, Boise, ID (US);
Hyuntae Kim, Boise, ID (US);
Richard L. Stocks, Boise, ID (US);
Luan Tran, Meridian, ID (US);
John K. Lee, Boise, ID (US);
Hyuntae Kim, Boise, ID (US);
Richard L. Stocks, Boise, ID (US);
Luan Tran, Meridian, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods for fabricating contacts of semiconductor device structures include forming a dielectric layer over a semiconductor substrate with active-device regions spaced at a first pitch, forming a first plurality of substantially in-line apertures over every second active-device region of the active-device regions, and forming a second plurality of substantially in-line apertures laterally offset from apertures of the first plurality over active-device regions over which apertures of the first plurality are not located. Methods for designing semiconductor device structures include forming at least two laterally offset sets of contacts over a substrate including active-device regions at a first pitch, the contacts being formed at a second pitch that is about twice the first pitch.