The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Apr. 23, 2010
Toshihiro Morisawa, Yokohama, JP;
Takehiko Tani, Hitachi, JP;
Hisataka Nagai, Hitachi, JP;
Takashi Furuya, Hitachi, JP;
Toshihiro Morisawa, Yokohama, JP;
Takehiko Tani, Hitachi, JP;
Hisataka Nagai, Hitachi, JP;
Takashi Furuya, Hitachi, JP;
Hitachi Cable, Ltd., Tokyo, JP;
Abstract
In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.