The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8365105 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 29, 2013

Filed:

Feb. 02, 2010
Applicants:

Norimasa Nagase, Yokohama, JP;

Koichi Suzuki, Yokohama, JP;

Masahiko Minemura, Yokohama, JP;

Inventors:

Norimasa Nagase, Yokohama, JP;

Koichi Suzuki, Yokohama, JP;

Masahiko Minemura, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of performing an optical proximity effect correction to a first photomask pattern for a wiring of a semiconductor device for use in combination with a second photomask pattern for a via, the wiring including an end portion coupled to the via, the method being performed by a computer including a memory storing layout data of the first photomask pattern and the second photomask pattern, including extracting a pattern of layout data of the first photomask pattern for the wiring corresponding to the end portion of the wiring and layout data of the second photomask pattern for the via.


Find Patent Forward Citations

Nagase, Norimasa. (2013). Method of performing optical proximity effect corrections to photomask pattern (U.S. Patent No. 8365105). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8365105

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