The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Mar. 30, 2010
Hsin-ming Chen, Tainan County, TW;
Shih-chen Wang, Taipei, TW;
Wen-hao Ching, Hsinchu County, TW;
Yen-hsin Lai, Taipei, TW;
Hau-yan LU, Kaohsiung, TW;
Ching-sung Yang, Hsinchu, TW;
Hsin-Ming Chen, Tainan County, TW;
Shih-Chen Wang, Taipei, TW;
Wen-Hao Ching, Hsinchu County, TW;
Yen-Hsin Lai, Taipei, TW;
Hau-Yan Lu, Kaohsiung, TW;
Ching-Sung Yang, Hsinchu, TW;
eMemory Technology Inc., Hsinchu, TW;
Abstract
A non-volatile memory unit cell includes a first transistor pair and first and second control gates. The first transistor pair includes first and second transistors that are connected in series and of the same type. The first and second transistors have a first floating polysilicon gate and a second floating polysilicon gate, respectively. The first control gate is coupled to the first floating polysilicon gate through a tunneling junction and the second control gate is coupled to the second floating polysilicon gate through another tunneling junction.