The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Mar. 23, 2010
Yen-hao Shih, Elmsford, NY (US);
Huai-yu Cheng, Hsinchu, TW;
Chieh-fang Chen, Panchiao, TW;
Chao-i Wu, Hsinchu, TW;
Ming Hsiu Lee, Hsinchu, TW;
Hsiang-lan Lung, Dobbs Ferry, NY (US);
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Simone Raoux, New York, NY (US);
Chung H Lam, Peekskill, NY (US);
Yen-Hao Shih, Elmsford, NY (US);
Huai-Yu Cheng, Hsinchu, TW;
Chieh-Fang Chen, Panchiao, TW;
Chao-I Wu, Hsinchu, TW;
Ming Hsiu Lee, Hsinchu, TW;
Hsiang-Lan Lung, Dobbs Ferry, NY (US);
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Simone Raoux, New York, NY (US);
Chung H Lam, Peekskill, NY (US);
Macronix International Co., Ltd., Hsinchu, TW;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A phase change memory device with a memory element including a basis phase change material, such as a chalcogenide, and one or more additives, where the additive or additives have a non-constant concentration profile along an inter-electrode current path through a memory element. The use of 'non-constant' concentration profiles for additives enables doping the different zones with different materials and concentrations, according to the different crystallographic, thermal and electrical conditions, and different phase transition conditions.