Three dimensional nanoscale circuit interconnect and method of assembly by dielectrophoresis

Abstract

An assembly of nanoelements forms a three-dimensional nanoscale circuit interconnect for use in microelectronic devices. A process for producing the circuit interconnect includes using dielectrophoresis by applying an electrical field across a gap between vertically displaced non-coplanar microelectrodes in the presence of a liquid suspension of nanoelements such as nanoparticles or single-walled carbon nanotubes to form a nanoelement bridge connecting the microelectrodes. The assembly process can be carried out at room temperature, is compatible with conventional semiconductor fabrication, and has a high yield. The current-voltage curves obtained from the nanoelement bridge demonstrate that the assembly is functional with a resistance of −40 ohms for gold nanoparticles. The method is suitable for making high density three-dimensional circuit interconnects, vertically integrated nanosensors, and for in-line testing of manufactured conductive nanoelements.