The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2013

Filed:

Sep. 24, 2009
Applicants:

Jonghae Kim, San Diego, CA (US);

Brian M. Henderson, San Diego, CA (US);

Matthew M. Nowak, San Diego, CA (US);

Jiayu Xu, San Diego, CA (US);

Inventors:

Jonghae Kim, San Diego, CA (US);

Brian M. Henderson, San Diego, CA (US);

Matthew M. Nowak, San Diego, CA (US);

Jiayu Xu, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
Abstract

Method of forming a radio frequency integrated circuit (RFIC) is provided. The RFIC comprises one or more electronic devices formed in a semiconductor substrate and one or more passive devices on a dielectric substrate, arranged in a stacking manner. Electrical shield structure is formed in between to shield electronic devices in the semiconductor substrate from the passive devices in the dielectric substrate. Vertical through-silicon-vias (TSVs) are formed to provide electrical connections between the passive devices in the dielectric substrate and the electronic devices in the semiconductor substrate.


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