The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Jun. 04, 2010
Hirohisa Kawasaki, Ballston Spa, NY (US);
Chung-hsun Lin, Yorktown Heights, NY (US);
Hirohisa Kawasaki, Ballston Spa, NY (US);
Chung-hsun Lin, Yorktown Heights, NY (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
FinFETs and methods of making FinFETs are provided. The FinFET contains two or more fins over a semiconductor substrate; two or more epitaxial layers over side surfaces of the fins; and metal-semiconductor compounds over an upper surfaces of the epitaxial layers. The fin has side surfaces that are substantially vertical relative to the upper surface of the semiconductor substrate. The epitaxial layer has an upper surface that extends at an oblique angle with respect to the side surface of the fin. The FinFET can contain a contact over the metal-semiconductor compounds.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile