The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Sep. 29, 2009
Hung-lin Shih, Hsinchu, TW;
Jr-bin Chen, Taipei, TW;
Pei-ching Yin, Hsinchu, TW;
Hui-fang Tsai, Hsinchu, TW;
Hung-Lin Shih, Hsinchu, TW;
Jr-Bin Chen, Taipei, TW;
Pei-Ching Yin, Hsinchu, TW;
Hui-Fang Tsai, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A non-volatile memory cell includes a semiconductor substrate with isolation structures formed therein and thereby transistor region and capacitor region are defined therein. A conductor is disposed over the isolation structures, the transistor region and a first-type doped well disposed in the capacitor region. The conductor includes a capacitor portion disposed over the first-type doped well, a transistor portion disposed over the transistor region, a first edge disposed over the isolation structure at a side of the transistor region, and an opposite second edge disposed over the first-type doped well. Two first ion doped wells are disposed in the transistor region and respectively at two sides of the transistor portion, and constitutes a transistor with the transistor portion. A second ion doped region is disposed in the capacitor region excluding the conductor and constitutes a capacitor with the capacitor portion.