The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Jan. 13, 2006
Claude L. Bertin, South Burlington, VT (US);
Mitchell Meinhold, Arlington, MA (US);
Steven L. Konsek, Boston, MA (US);
Thomas Rueckes, Rockport, MA (US);
Frank Guo, Danville, CA (US);
Claude L. Bertin, South Burlington, VT (US);
Mitchell Meinhold, Arlington, MA (US);
Steven L. Konsek, Boston, MA (US);
Thomas Rueckes, Rockport, MA (US);
Frank Guo, Danville, CA (US);
Nantero Inc., Woburn, MA (US);
Abstract
Field effect devices having channels of nanofabric and methods of making same. A nanotube field effect transistor is made to have a substrate, and a drain region and a source region in spaced relation relative to each other. A channel region is formed from a fabric of nanotubes, in which the nanotubes of the channel region are substantially all of the same semiconducting type of nanotubes. At least one gate is formed in proximity to the channel region so that the gate may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain and source region. Forming a channel region includes forming a fabric of nanotubes in which the fabric has both semiconducting and metallic nanotubes and the fabric is processed to remove substantially all of the metallic nanotubes.