The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Aug. 13, 2009
Applicant:
S. Brad Herner, Santa Clara, CA (US);
Inventor:
S. Brad Herner, Santa Clara, CA (US);
Assignee:
GTAT Corporation, Nashua, NH (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
Abstract
A donor silicon wafer may be bonded to a substrate and a lamina cleaved from the donor wafer. A photovoltaic cell may be formed from the lamina bonded to the substrate. An intermetal stack is described that is optimized for use in such a cell. The intermetal stack may include a titanium layer in contact with the lamina, which reacts to form titanium silicide, a non-reactive barrier layer to check the silicide reaction, a low-resistance layer, and an adhesion layer to help adhesion to the receiver element.