The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Mar. 30, 2011
Gerhard Schmidt, Wernberg, AT;
Hans-joachim Schulze, Taufkirchen, DE;
Bernd Kolbesen, Taufkirchen, DE;
Gerhard Schmidt, Wernberg, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Bernd Kolbesen, Taufkirchen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
An undoped semiconductor substrate is doped by applying stress at a side of the undoped semiconductor substrate to release self interstitials in the substrate and implanting chalcogen atoms into the side of the substrate. The substrate is annealed to form a first semiconductor region containing the chalcogen atoms and a second semiconductor region devoid of the chalcogen atoms. The first semiconductor region has a doping concentration higher than the doping concentration of the second semiconductor region. The indiffusion of chalcogen atoms into a semiconductor material in the presence of self interstitials can also be used to form field stop regions in power semiconductor devices.