The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2013

Filed:

Apr. 05, 2010
Applicants:

Kai Frohberg, Niederau, DE;

Heike Berthold, Hirschfeld, DE;

Katrin Reiche, Goltzscha, DE;

Uwe Griebenow, Markkleeberg, DE;

Inventors:

Kai Frohberg, Niederau, DE;

Heike Berthold, Hirschfeld, DE;

Katrin Reiche, Goltzscha, DE;

Uwe Griebenow, Markkleeberg, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/335 (2006.01);
U.S. Cl.
CPC ...
Abstract

By providing an implantation blocking material on the gate electrode structures of advanced semiconductor devices during high energy implantation processes, the required shielding effect with respect to the channel regions of the transistors may be accomplished. In a later manufacturing stage, the implantation blocking portion may be removed to reduce the gate electrode height to a desired level in order to enhance the process conditions during the deposition of an interlayer dielectric material, thereby significantly reducing the risk of creating irregularities, such as voids, in the interlayer dielectric material, even in densely packed device regions.


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