The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Jun. 01, 2006
IN Sung Park, Seoul, KR;
Tae Ho Lee, Seoul, KR;
Jin Ho Ahn, Seoul, KR;
Rana Biswas, Ames, IA (US);
Kristen P. Constant, Ames, IA (US);
Kai-ming Ho, Ames, IA (US);
Jae-hwang Lee, Brookline, MA (US);
In Sung Park, Seoul, KR;
Tae Ho Lee, Seoul, KR;
Jin Ho Ahn, Seoul, KR;
Rana Biswas, Ames, IA (US);
Kristen P. Constant, Ames, IA (US);
Kai-Ming Ho, Ames, IA (US);
Jae-Hwang Lee, Brookline, MA (US);
Abstract
A manufacturing method of a photonic crystal is provided. In the method, a high-refractive-index material is conformally deposited on an exposed portion of a periodic template composed of a low-refractive-index material by an atomic layer deposition process so that a difference in refractive indices or dielectric constants between the template and adjacent air becomes greater, which makes it possible to form a three-dimensional photonic crystal having a superior photonic bandgap. Herein, the three-dimensional structure may be prepared by a layer-by-layer method.