The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Mar. 22, 2007
Michimasa Miyanaga, Itami, JP;
Naho Mizuhara, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Hideaki Nakahata, Itami, JP;
Tomohiro Kawase, Itami, JP;
Michimasa Miyanaga, Itami, JP;
Naho Mizuhara, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Hideaki Nakahata, Itami, JP;
Tomohiro Kawase, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
This III-nitride single-crystal growth method, being a method of growing a AlGaN single crystal () by sublimation, is furnished with a step of placing source material () in a crucible (), and a step of sublimating the source material () to grow AlGaN (0<x≦1) single crystal () in the crucible (), with the AlGaN (0<y≦1) source () and an impurity element (), which is at least one selected from the group consisting of IVb elements and IIa elements, being included in the source material (). This growth method makes it possible to stably grow bulk III-nitride single crystals of low dislocation density and of favorable crystallinity.