The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Sep. 07, 2011
Yung-fa Lin, Hsinchu, TW;
Shou-yi Hsu, Hsinchu, TW;
Meng-wei Wu, Hsinchu, TW;
Main-gwo Chen, Hsinchu, TW;
Yi-chun Shih, Nantou County, TW;
Yung-Fa Lin, Hsinchu, TW;
Shou-Yi Hsu, Hsinchu, TW;
Meng-Wei Wu, Hsinchu, TW;
Main-Gwo Chen, Hsinchu, TW;
Yi-Chun Shih, Nantou County, TW;
Anpec Electronics Corporation, Hsinchu Science Park, Hsin-Chu, TW;
Abstract
A semiconductor power device includes a substrate, a first semiconductor layer on the substrate, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer. At least a recessed epitaxial structure is disposed within a cell region and the recessed epitaxial structure may be formed in a pillar or stripe shape. A first vertical diffusion region is disposed in the third semiconductor layer and the recessed epitaxial structure is surrounded by the first vertical diffusion region. A source conductor is disposed on the recessed epitaxial structure and a trench isolation is disposed within a junction termination region surrounding the cell region. In addition, the trench isolation includes a trench, a first insulating layer on an interior surface of the trench, and a conductive layer filled into the trench, wherein the source conductor connects electrically with the conductive layer.